View IXFN64N60P_5064470.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 64N60P
VDSS ID25
RDS(on) trr
= =
600 V 50 A 96 m 200 ns
miniBLOC, SOT-227 B (IXFN) E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
Maximum Ratings 600 600 30 40 50 150 64 80 3.5 20 700 -55 ... +150 150 -55 ... +150 300 2500 V V V V A A A mJ J V/ns W C C C C V~
G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting torque Terminal torque
1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 g
Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 200 25 1000 96 V V nA A A m
* * * *
Advantages * Easy to mount * Space savings * High power density
VGS = 10 V, ID = 0.5 ID25, Note 1
(c) 2006 IXYS All rights reserved
DS99443E(01/06)
IXFN 64N60P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 40 63 12 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 80 28 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 1 (External) 23 79 24 200 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 68 0.18 0.05 S nF pF pF ns ns ns ns nC nC nC C/W C/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 64 150 1.5 200 0.6 6.0 A A V ns C A
P Q R S T U
1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFN 64N60P
Fig. 1. Output Characteristics @ 25C
65 60 55 50 45 V GS = 10V 8V 7V 160 140 120 V GS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V 6V
100 80 60
7V
6V 40 20 5V 0 0 2 4 6 8 10 12 14 16 18 20
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125C
65 60 55 50 45 V GS = 10V 7V 3.1 2.8 2.5
Fig. 4. R DS(on) Normalized to ID = 32A v s. Junction Temperature
V GS = 10V
R DS(on) - Normalized
I D - Amperes
40 35 30 25 20 15 10 5 0 0 2 4 6 8
6V
2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 64A I D = 32A
5V
10
12
14
-50
-25
0
25
50
75
100
125
150
V DS - Volts
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 32A v s. Drain Current
3.2 3 2.8 V GS = 10V TJ = 125C
55 50 45 40
Fig. 6. Maximum Drain Current v s. Case Temperature
R DS(on) - Normalized
2.6
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 TJ = 25C
I D - Amperes
2.4
35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
T J - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 64N60P
Fig. 7. Input Admittance
100 90 80 70 130 120 110 100
Fig. 8. Transconductance
g f s - Siemens
90 80 70 60 50 40 30 20 10 0 TJ = - 40C 25C 125C
I D - Amperes
60 50 40 30 20 10 0 3.5 4 4.5 5 5.5 6 6.5 7 TJ = 125C 25C - 40C
0
10
20
30
40
50
60
70
80
90
100
V GS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
140 120 100 10 9 8 7 V DS = 300V I D = 32A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
V GS - Volts
TJ = 25C 0.8 0.9 1 1.1 1.2
80 60 TJ = 125C 40 20 0 0.3 0.4 0.5 0.6 0.7
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200
V SD - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz C iss
Fig. 12. Forward-Bias Safe Operating Area
1,000 TJ = 150C TC = 25C RDS(on) Limit
Capacitance - PicoFarads
10,000
I D - Amperes
100 25s 100s 10 1ms 10ms
1,000 C oss
100 C rss 10 0 5 10 15 20 25 30 35 40
DC
1 10 100 1000
V DS - Volts
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 64N60P
Fig. 13. Maximum Transient Thermal Resistance
1.000
R (th)JC - C / W
0.100
0.010 0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
(c) 2006 IXYS All rights reserved

▲Up To Search▲

Price & Availability of IXFN64N60P

	To Download IXFN64N60P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .